symbol v ds v gs i dm t j , t stg symbol typ max 50 62.5 73 110 r q jl 31 40 junction and storage temperature range a p d c 2 1.44 -55 to 150 t a =70c i d -8 -6.9 -40 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 25 gate-source voltage drain-source voltage -30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja v ds (v) = -30v i d = -8a (v gs = -20v) r ds(on) < 18m w (v gs = -20v) r ds(on) < 20m w (v gs = -10v) the AO4815 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge with a 25v gate rating. this device is suita ble for use as a load switch or in pwm applications. th e device is esd protected. g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view soic-8 s1 g1 d1 s2 g2 d2 www.freescale.net.cn 1/4 AO4815 30v dual p-channel mosfet general description features
symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 1 m a v gs(th) -1 -2.8 -3 v i d(on) -40 a 14.1 18 t j =125c 19 24 16.2 20 m w 37 m w g fs 15 s v sd -1 v i s -2.6 a c iss 2330 2900 pf c oss 480 pf c rss 320 pf r g 6.8 10 w q g 41 52 nc q gs 10 nc q gd 12 nc t d(on) 13 ns t r 12 ns t d(off) 51 ns t f 30.5 ns t rr 28 35 ns q rr 20.5 nc maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-15v, f=1mhz gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.8 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =-10v, v ds =-15v, i d =-8a gate source charge m w v gs =-10v, i d =-8a i s =-1a,v gs =0v v ds =-5v, i d =-8a v gs =-4.5v, i d =-5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-24v, v gs =0v v ds =0v, v gs =25v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-8a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-20v, i d =-8a reverse transfer capacitance i f =-8a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the u ser's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev 4: nov. 2010 www.freescale.net.cn 2/4 AO4815 30v dual p-channel mosfet
typical electrical and thermal characteristics this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 10 20 30 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics -i d (a) v gs =-4v -4.5v -5v -6v -10v 0 5 10 15 20 25 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 14 15 16 17 18 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-8a v gs =-20v i d =-8a 10 20 30 40 50 60 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-10v v gs =-20v i d =-8a 25c 125c www.freescale.net.cn 3/4 AO4815 30v dual p-channel mosfet
typical electrical and thermal characteristics this product has been designed and qualified for th e consumer market. applications or uses as critical out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss v ds =-15v i d =-8a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (notee) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 m 1s 10s www.freescale.net.cn 4/4 AO4815 30v dual p-channel mosfet
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